①. FRAM is non-volatile and can easily be read/written 10 trillion times. ②. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. ③. It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. ④. The FRAM chip used provides 8 KB of memory, and uses a clock up to 20 MHz. ⑤. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. ⑥. FRAM is non-volatile and can easily be read/written 10 trillion times. ⑦. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. ⑧. The FRAM chip used provides 8 KB of memory, and uses a clock up to 20 MHz. ⑨. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. ⑩. Addr: 1010+A2+A1+A0 ⑪. Default: 0 x 50 ⑫. VCC/Logic: 2.7-5.5V