1,FRAM is non-volatile and can easily be read or written 10 trillion times. 2,It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. 3,It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. 4,The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. 5,Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. Features: FRAM is non-volatile and can easily be read or written 10 trillion times. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. Specification: Condition: Addr: 1010andA2andA1andA0 Default: 0 x 50 VCC or Logic: 2.7-5.5V Package List: 1 x FRAM Breakout Board Note: Due to the light and screen setting difference, the item's color may be slightly different from the pictures. Please allow slight dimension difference due to different manual measurement.